Nanya Technology quadruples capital spending to $6.2B as DRAM demand surges

Nanya Technology is pouring money into new DRAM fabrication plants at a pace that would make most chipmakers nervous. The Taiwanese memory manufacturer plans to boost its 2027 capital expenditure to over NT$200 billion, roughly $6.2 billion, a fourfold increase from its 2026 budget of more than NT$50 billion. A $15 billion bet on next-gen memory The centerpiece of Nanya’s expansion is a new 12-inch DRAM fabrication plant in the Taishan District of New Taipei City. Groundbreaking took place back in 2022, with the total investment projected at NT$480 billion, approximately $15 billion spread across the full buildout. The first phase targets a monthly production capacity of 30,000 wafers by 2028. Eventually, the facility is expected to scale to 45,000 wafers per month. The fab will utilize 10nm-class technology for next-generation DDR products. Beyond the Taishan plant itself, Nanya has committed NT$346.6 billion, around $10.7 billion, specifically to EUV-equipped DRAM production spanning 2026 through 2029. EUV lithography, or extreme ultraviolet lithography, allows manufacturers to print circuit patterns at incredibly small scales, which translates to denser, faster, and more power-e...